Rochester Electronics Memory CY7C1370B-133BZC

Description
ZBT SRAM, 512KX36, 4.2NS
  • Memory - CY7C1370B-133BZC - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
ZBT SRAM, 512KX36, 4.2NS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C1370B-133BZC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY7C1370B-133BZC
Memory CY7C1370B-133BZC
ZBT SRAM, 512KX36, 4.2NS

ZBT SRAM, 512KX36, 4.2NS

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY7C1370B-133BZC
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

- 27C512-55DM/B - Rochester Electronics
Rochester Electronics
Memory
27C512-55DM/B
Specs
Memory Category EPROM
Logic Family CMOS
Package Type DIP; CDIP28
View Details
4 suppliers
Memories - nvSRAM (non-volatile SRAM) - CY14B512Q2A-SXIT - CY14B512Q2A-SXIT - Infineon Technologies AG
Infineon Technologies AG
Memories - nvSRAM (non-volatile SRAM) - CY14B512Q2A-SXIT
CY14B512Q2A-SXIT
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits
View Details
5 suppliers
Memory IC and Storage Component - 736-DP8429D-80 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
DP8429D-80
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers
Memory - MYXXXXX16MP8PB-45/XX - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXXXXX16MP8PB-45/XX
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details