Rochester Electronics Memory CY7C1365C-133BZI

Description
IC SRAM 8MBIT PARALLEL 165FBGA
  • Memory - CY7C1365C-133BZI - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC SRAM 8MBIT PARALLEL 165FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C1365C-133BZI - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY7C1365C-133BZI
Memory CY7C1365C-133BZI
IC SRAM 8MBIT PARALLEL 165FBGA

IC SRAM 8MBIT PARALLEL 165FBGA

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY7C1365C-133BZI
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Memory
AS29LV016J
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 27S185ADM/B - Quarktwin Technology Ltd.
Rochester Electronics
Memory
27S185ADM/B
View Details
2 suppliers
Integrated Circuits (ICs) - Memory - Memory - 93Z451FMQB - Shenzhen Shengyu Electronics Technology Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
93Z451FMQB
Specs
Memory Category PROM; Non-Volatile
Cycle Time 55 ns
Density 8 kbits
View Details
2 suppliers
Memory - 16-3417-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
16-3417-01-T
View Details
2 suppliers