Rochester Electronics Memory CY7C1315JV18-300BZC

Description
IC SRAM 18MBIT PARALLEL 165FBGA
  • Memory - CY7C1315JV18-300BZC - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC SRAM 18MBIT PARALLEL 165FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C1315JV18-300BZC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY7C1315JV18-300BZC
Memory CY7C1315JV18-300BZC
IC SRAM 18MBIT PARALLEL 165FBGA

IC SRAM 18MBIT PARALLEL 165FBGA

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY7C1315JV18-300BZC
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 10415FC10 - Lingto Electronic Limited
Rochester Electronics
Memory
10415FC10
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821601VXC - 5962R1821601VXC - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821601VXC
5962R1821601VXC
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2000 kbits
Package Type CG-SSOP-16
View Details
Memory - PAL16R6BJ/883 - Quarktwin Technology Ltd.
Texas Instruments
Memory
PAL16R6BJ/883
View Details
2 suppliers
Memory - AS5C1001 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C1001
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 to 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details