Rochester Electronics Memory CY7C1313V18-200BZC

Description
QDR SRAM, 1MX18, 0.45NS
  • Memory - CY7C1313V18-200BZC - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
QDR SRAM, 1MX18, 0.45NS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C1313V18-200BZC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY7C1313V18-200BZC
Memory CY7C1313V18-200BZC
QDR SRAM, 1MX18, 0.45NS

QDR SRAM, 1MX18, 0.45NS

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY7C1313V18-200BZC
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 2504783 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
2504783
View Details
Memory - MYX4DDR3L128M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DDR3L128M16JTBG
Specs
Memory Category DDR3
Access Time 1.25 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
View Details
Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882682
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 71V3557S80PFI - Lingto Electronic Limited
Rochester Electronics
Memory
71V3557S80PFI
Specs
Memory Category SRAM; SRAM Chip
Access Time 8 ns
Density 4500 kbits
View Details