Rochester Electronics Memory CY7C09579V-100BBC

Description
IC SRAM 1.152MBIT PAR 172FBGA
  • Memory - CY7C09579V-100BBC - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC SRAM 1.152MBIT PAR 172FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C09579V-100BBC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY7C09579V-100BBC
Memory CY7C09579V-100BBC
IC SRAM 1.152MBIT PAR 172FBGA

IC SRAM 1.152MBIT PAR 172FBGA

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY7C09579V-100BBC
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - JBP28S42MJ - ODG (Origin Data Global)
Texas Instruments
Memory
JBP28S42MJ
Specs
Memory Category PROM; PROM
Access Time 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
4 suppliers
Memory - CY14E256Q2A-SXI-ND - DigiKey
Infineon Technologies AG
Memory
CY14E256Q2A-SXI
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)"
View Details
3 suppliers
Memory - 71256S85DB - Lingto Electronic Limited
Rochester Electronics
Memory
71256S85DB
Specs
Memory Category SRAM; SRAM Chip
Access Time 85 ns
Density 256 kbits
View Details
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420773P
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details