Rochester Electronics Memory CY62147EV30LL-45ZSXA

Description
IC SRAM 4MBIT PARALLEL 44TSOP II
  • Memory - CY62147EV30LL-45ZSXA - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC SRAM 4MBIT PARALLEL 44TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY62147EV30LL-45ZSXA - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY62147EV30LL-45ZSXA
Memory CY62147EV30LL-45ZSXA
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY62147EV30LL-45ZSXA
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 7164L20YG - Lingto Electronic Limited
Rochester Electronics
Memory
7164L20YG
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8ER128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - Memory - Controllers - BQ2205LYPWR - 1154093-BQ2205LYPWR - Win Source Electronics
Texas Instruments
Memory - Memory - Controllers - BQ2205LYPWR
BQ2205LYPWR
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP
Supply Voltage 3 V ~ 3.6 V
View Details
4 suppliers
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821501VXF - 5962R1821501VXF - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821501VXF
5962R1821501VXF
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 2 k
View Details