Rochester Electronics Memory CY10E422-7DC

Description
STANDARD SRAM, 256X4, 7NS10K
  • Memory - CY10E422-7DC - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
STANDARD SRAM, 256X4, 7NS10K
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY10E422-7DC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY10E422-7DC
Memory CY10E422-7DC
STANDARD SRAM, 256X4, 7NS10K

STANDARD SRAM, 256X4, 7NS10K

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY10E422-7DC
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882632P
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8ER128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - EEPROM - 24C02-I/P - 854722-24C02-I/P - Win Source Electronics
Rochester Electronics
Memory - EEPROM - 24C02-I/P
24C02-I/P
Specs
Memory Category EEPROM
View Details
2 suppliers
Controllers - DP8431VX-33 - Quarktwin Technology Ltd.
Texas Instruments
Controllers
DP8431VX-33
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers