Rochester Electronics TRANSISTORS - RF Transistors (BJT) - CLF1G0035-200P CLF1G0035-200P

The CLF1G0035-200P is a 200W broadband RF power GaN HEMT designed for operation from DC to 3.5 GHz in applications such as wireless infrastructure, radar, and industrial amplifiers. It is housed in a flanged ceramic SOT1228A package with two mounting holes and four leads, measuring up to 29.08 mm in length, 18.29 mm in height, and 6.60 mm in width. The device supports a drain-source voltage of up to 150 V and operates with a gate-source voltage range of -8 V to +3 V. It exhibits excellent ruggedness with a VSWR tolerance of 10:1 and has a thermal resistance from junction to case of 0.52 K/W at a case temperature of 85 °C. The part meets the IEC 60134 Absolute Maximum Rating System and is classified as ESD-sensitive per Human Body Model Class 1B.