Rochester Electronics Memory CDP1821CD3R1783

Description
HIGH-RELIABILITY CMOS 1024-WORD
  • Memory - CDP1821CD3R1783 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
HIGH-RELIABILITY CMOS 1024-WORD
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CDP1821CD3R1783 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CDP1821CD3R1783
Memory CDP1821CD3R1783
HIGH-RELIABILITY CMOS 1024-WORD

HIGH-RELIABILITY CMOS 1024-WORD

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CDP1821CD3R1783
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882723P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882723P
Specs
Memory Category Flash
Density 16000 kbits
Package Type USON
View Details
Memories - nvSRAM (non-volatile SRAM) - CY14B104K-ZS25XIT - CY14B104K-ZS25XIT - Infineon Technologies AG
Infineon Technologies AG
Memories - nvSRAM (non-volatile SRAM) - CY14B104K-ZS25XIT
CY14B104K-ZS25XIT
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4000 kbits
View Details
6 suppliers
Memory - 28C64A-25B/YA - Lingto Electronic Limited
Rochester Electronics
Memory
28C64A-25B/YA
Specs
Memory Category EEPROM; EEPROM
Access Time 250 ns
Density 64 kbits
View Details
Controllers - BQ2204ASN-N - Quarktwin Technology Ltd.
Texas Instruments
Controllers
BQ2204ASN-N
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details