Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ42 BUZ42

Description
Manufacturer: Harris Corporation Win Source Part Number: 913803-BUZ42 Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095
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Description
Manufacturer: Harris Corporation Win Source Part Number: 913803-BUZ42 Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095
Request a Quote
Datasheet
Datasheet Summary
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The BUZ42 is an N-channel enhancement mode MOSFET designed for switching applications with avalanche capability. It is packaged in a TO-220 AB case, measuring 10.2 mm x 4.5 mm x 15.7 mm (as standard for TO-220 AB). It has a continuous drain current rating of 4 A at 30°C, a drain-source breakdown voltage of 500 V, and a drain-source on-resistance of up to 2 Ω at 10 V gate bias. The device supports an avalanche energy of 220 mJ in single-pulse operation and is rated for an operating junction temperature from -55°C to 150°C. Thermal resistance from junction to case is 1.67 K/W. The part meets IEC climatic category 55/150/56 and DIN humidity category E.

Datasheet Summary
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The BUZ42 is an N-channel enhancement mode MOSFET designed for switching applications with avalanche capability. It is packaged in a TO-220 AB case, measuring 10.2 mm x 4.5 mm x 15.7 mm (as standard for TO-220 AB). It has a continuous drain current rating of 4 A at 30°C, a drain-source breakdown voltage of 500 V, and a drain-source on-resistance of up to 2 Ω at 10 V gate bias. The device supports an avalanche energy of 220 mJ in single-pulse operation and is rated for an operating junction temperature from -55°C to 150°C. Thermal resistance from junction to case is 1.67 K/W. The part meets IEC climatic category 55/150/56 and DIN humidity category E.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ42 - 913803-BUZ42 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ42
913803-BUZ42
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ42 913803-BUZ42
Manufacturer: Harris Corporation Win Source Part Number: 913803-BUZ42 Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095

Manufacturer: Harris Corporation
Win Source Part Number: 913803-BUZ42
Series: *
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Power MOSFET
Product Number 913803-BUZ42
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ42
Package Type SOT3
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