Dual N-channel 60 V MOSFET in an LFPAK56D (SOT1205) package designed for automotive applications, featuring a maximum drain-source voltage of 60 V, continuous drain current of 40 A at 25 °C, and a drain-source on-state resistance of 10 to 12.5 mΩ at 25 °C and VGS = 5 V. The device is rated for a junction and storage temperature up to 175 °C, meets AEC-Q101 standards, and supports repetitive avalanche operation with a non-repetitive avalanche energy of 82 mJ. Thermal resistance from junction to mounting base is 2.36 K/W. The LFPAK56D package measures 5.30 mm by 4.70 mm with terminals spaced 1.8 mm apart and a maximum height of 1.05 mm.
Manufacturer: NXP
Win Source Part Number: 848929-BUK9K13-60EX
Features: Mosfet Array
Package: Bulk
Categories: Discrete Semiconductor Products
Popularity: Medium
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 848929-BUK9K13-60EX |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9K13-60EX |
| Package Type | SOT3 |
