N-channel 100 V MOSFET designed for high-performance automotive applications, featuring a 22 mΩ drain-source on-state resistance at 25 °C and 49 A continuous drain current at 25 °C. The device is housed in an LFPAK56 (Power SO8) package and is rated for operation up to 175 °C junction temperature. It is compliant with AEC-Q101 standard and supports repetitive avalanche operation with 81 mJ non-repetitive avalanche energy. The gate-source threshold voltage exceeds 1 V at 175 °C, ensuring true standard level operation.
Manufacturer: NXP
Win Source Part Number: 913776-BUK7Y22-100E1
Series: *
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 1500
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095
| Win Source Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 913776-BUK7Y22-100E115 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7Y22-100E115 |
| Package Type | SOT3 |
