The BSO615C is a dual N- and P-channel enhancement mode MOSFET in a PG-DSO-8 surface mount package, designed for low-power switching applications. It has a drain-source voltage rating of 60 V for the N-channel and -60 V for the P-channel, with continuous drain currents of 3.1 A and -2 A respectively at 25 °C. The drain-source on-state resistance is 0.11 Ω for the N-channel and 0.3 Ω for the P-channel at 10 V gate drive. The device is avalanche rated with single-pulse energy ratings of 47 mJ (N-channel) and 70 mJ (P-channel), and meets RoHS compliance with Pb-free lead plating. Operating and storage junction temperatures range from -55 °C to +150 °C, and it is certified to IEC climatic category 55/150/56.
Manufacturer: Infineon Technologies
Win Source Part Number: 864724-BSO615CGHUMA1
Series: SIPMOS®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array N and P-Channel 60V 3.1A (Ta), 2A (Ta) 2W (Ta) Surface Mount PG-DSO-8
Package: Bulk
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: PG-DSO-8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 864724-BSO615CGHUMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO615CGHUMA1 |
| Polarity | P-Channel |
