Rochester Electronics Memory BQ4011YMA-150

Description
IC NVSRAM 256KBIT PARALLEL 28DIP
  • Memory - BQ4011YMA-150 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC NVSRAM 256KBIT PARALLEL 28DIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - BQ4011YMA-150 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
BQ4011YMA-150
Memory BQ4011YMA-150
IC NVSRAM 256KBIT PARALLEL 28DIP

IC NVSRAM 256KBIT PARALLEL 28DIP

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number BQ4011YMA-150
Product Name Memory
Memory Category NVSRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28C17A-20B/XA - Lingto Electronic Limited
Rochester Electronics
Memory
28C17A-20B/XA
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 16 kbits
View Details
Flash Memory - 1882560 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882560
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - RAM - MT5C1008ECA55L883C - 1232483-MT5C1008ECA55L883C - Win Source Electronics
Micross Components, Inc.
Memory - RAM - MT5C1008ECA55L883C
MT5C1008ECA55L883C
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory IC and Storage Component - 774-CY62126DV30LL-55BVI - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Memory IC and Storage Component
CY62126DV30LL-55BVI
Specs
Memory Category Volatile; SRAM Chip
Access Time 55 ns
Cycle Time 55 ns
View Details