Rochester Electronics Memory BQ4010YMA-70N

Description
IC NVSRAM 64KBIT PARALLEL 28DIP
  • Memory - BQ4010YMA-70N - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC NVSRAM 64KBIT PARALLEL 28DIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - BQ4010YMA-70N - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
BQ4010YMA-70N
Memory BQ4010YMA-70N
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number BQ4010YMA-70N
Product Name Memory
Memory Category NVSRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

- 27C512-55DM/B - Rochester Electronics
Rochester Electronics
Integrated Circuits (ICs) - Memory - Memory
27C512-55DM/B
Specs
Memory Category EPROM
Logic Family CMOS
Package Type DIP; CDIP28
View Details
4 suppliers
Memory - AS8S512K32PECB - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8S512K32PECB
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Integrated Circuits (ICs) - Memory - Memory - 93Z451LMQB - Shenzhen Shengyu Electronics Technology Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
93Z451LMQB
Specs
Memory Category PROM; Non-Volatile
Density 8 kbits
Supply Voltage -55degC ~ 125degC (TC)
View Details
2 suppliers
Memory IC and Storage Component - 774-CY14B101L-SP35XC - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Memory IC and Storage Component
CY14B101L-SP35XC
Specs
Memory Category NVSRAM; Non-Volatile; SRAM Chip
Access Time 35 ns
Cycle Time 35 ns
View Details
3 suppliers