Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC856BWT1 BC856BWT1

The BC856BWT1 is a PNP silicon bipolar junction transistor designed for general purpose amplifier applications in surface mount circuits. It is housed in the SC-70/SOT-323 package, measuring 2.10 mm maximum in length, 1.35 mm maximum in width, and 1.00 mm maximum in height. The device has a collector-emitter voltage rating of -65 V, a collector current rating of -100 mA, and a total device dissipation of 150 mW at 25°C. The junction and storage temperature range is -55°C to +150°C. It meets Pb-free packaging requirements and is rated for thermal resistance of 883 °C/W from junction to ambient. The transistor has a current gain (hFE) range of 150 to 475 at IC = -2.0 mA and VCE = -5.0 V, and a current gain-bandwidth product of 100 MHz. The package complies with the SC-70/SOT-323 footprint standard with a 0.65 mm pitch and 3.0 mm lead span.