Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC848BDW1T1 BC848BDW1T1

The BC848BDW1T1 is a dual NPN bipolar junction transistor in a SOT-363/SC-88 surface-mount package for general-purpose amplifier applications. It has a collector-emitter voltage rating of 30 V, a collector-base voltage rating of 30 V, and an emitter-base voltage rating of 5.0 V. The continuous collector current is 100 mA, with a total device power dissipation of 380 mW and a thermal resistance of 328 °C/W. The junction and storage temperature range is -55 to +150 °C. DC current gain ranges from 200 to 450 at IC = 2.0 mA and VCE = 5.0 V. Collector-emitter saturation voltage is 0.25 V at IC = 10 mA and IB = 0.5 mA. The current-gain bandwidth product is 100 MHz, and the output capacitance is 4.5 pF at VCB = 10 V and f = 1.0 MHz. The part is shipped in 3000-unit reels.