The BAS28W is a silicon switching diode in a SOT343 package designed for high-speed switching applications. It features a reverse voltage rating of 80 V and a forward current of 200 mA, with a peak forward surge current of 4.5 A for 1 µs. The diode has a maximum power dissipation of 250 mW at junction temperatures up to 103°C, a junction temperature rating of 150°C, and a reverse recovery time of 4 ns. It is electrically insulated, RoHS compliant, and qualified to AEC-Q101 standards. The device's forward voltage reaches up to 1250 mV at 150 mA, and its diode capacitance is 2 pF at 0 V and 1 MHz. The SOT343 package has a thermal resistance from junction to solder point of no more than 190 K/W.
Small Signal Switching Diodes AF DIGITAL TRANSISTOR Product overview: BAS 28W H6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Rectifiers. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2085-BAS 28W H6327 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2085-BAS 28W H6327 |
| Product Name | Bipolar Transistor |
| Package Type | Reel |
