Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC559 BC559

The BC559 is a PNP epitaxial silicon transistor for switching and amplification applications, housed in a TO-92 package with dimensions of 4.58 mm height and 2.29 mm lead spacing. It has a collector-emitter voltage rating of -30 V, a collector current limit of -100 mA, and a power dissipation of 500 mW. The device features low noise performance with a noise figure of 1.2 to 4 dB at V_CE = -5 V and I_C = -200 µA, or 1.2 to 2 dB under broadband conditions. Its DC current gain (h_FE) ranges from 420 to 800 in the C classification, and it has a current gain-bandwidth product of 150 MHz. The junction temperature rating is 150 °C, and the storage temperature range is -65 °C to 150 °C.