Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC338 BC338

The BC338 is an NPN epitaxial silicon transistor for switching and amplifier applications, housed in a TO-92 package with dimensions of 4.58 mm to 4.73 mm in height, 2.29 mm diameter at the base, and 1.27 mm lead spacing. It has a collector-emitter voltage rating of 25 V, a collector current of 800 mA, and a power dissipation of 625 mW. The junction temperature ranges from -55°C to 150°C. Electrical characteristics include a DC current gain (hFE) of 160 to 400, a collector-emitter saturation voltage of 0.7 V at 500 mA collector current, and a current gain bandwidth product of 100 MHz. The transistor is compliant with industry standard packaging and marking conventions for the TO-92-3 configuration.