Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC213 BC213

The BC213 is a PNP silicon bipolar junction transistor for general-purpose amplification and switching, housed in a TO-92 package with a case style of 29-17. It has a collector-emitter voltage rating of -30 V, a collector-base voltage of -45 V, and an emitter-base voltage of -5.0 V. The continuous collector current is -100 mA, with a total device dissipation of 350 mW at 25°C ambient and 1.0 W at 25°C case temperature. The thermal resistance from junction to ambient is 357 °C/W, and from junction to case is 125 °C/W. The device operates and stores between -55°C and +150°C. Current gain (hFE) ranges from 80 to 140 under specified test conditions, with a current gain-bandwidth product of 360 MHz. The collector-emitter saturation voltage is up to 0.6 V at -100 mA collector current. It meets no specified industry standards beyond its electrical and thermal ratings.