Rochester Electronics Memory AT93C46-10SE-2.7

Description
EEPROM, 64X16, SERIAL, CMOS
  • Memory - AT93C46-10SE-2.7 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM, 64X16, SERIAL, CMOS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT93C46-10SE-2.7 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT93C46-10SE-2.7
Memory AT93C46-10SE-2.7
EEPROM, 64X16, SERIAL, CMOS

EEPROM, 64X16, SERIAL, CMOS

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number AT93C46-10SE-2.7
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8854102FA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-8854102FA
Specs
Memory Category PROM; PROM
Access Time 60 ns
Density 2 kbits
View Details
Memory - AS5C512K8 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C512K8
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - PAL16R6AJ/883 - Quarktwin Technology Ltd.
Texas Instruments
Memory
PAL16R6AJ/883
View Details
2 suppliers
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122202VYC - 5962F2122202VYC - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122202VYC
5962F2122202VYC
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 512000 kbits
Package Type CG-FP-68
View Details