Rochester Electronics Memory AT28C010E-12EM

Description
EEPROM, 128KX8, 120NS, PARALLEL
  • Memory - AT28C010E-12EM - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM, 128KX8, 120NS, PARALLEL
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C010E-12EM - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT28C010E-12EM
Memory AT28C010E-12EM
EEPROM, 128KX8, 120NS, PARALLEL

EEPROM, 128KX8, 120NS, PARALLEL

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number AT28C010E-12EM
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 29110BJA - Lingto Electronic Limited
Rochester Electronics
Memory
29110BJA
Specs
Memory Category SRAM; SRAM Chip
Access Time 70 ns
Density 16 kbits
View Details
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420773P
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - MYXxxSMSxxxxPxxxxx-xx/x - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXxxSMSxxxxPxxxxx-xx/x
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - NM24C09N - 1231761-NM24C09N - Win Source Electronics
Texas Instruments
Memory - NM24C09N
NM24C09N
Specs
Memory Category EEPROM
View Details