Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3113-ZK-E2-AZ 2SK3113-ZK-E2-AZ

The 2SK3113-Z is an N-channel DMOS FET in a TO-252 (MP-3Z) package, designed for high-voltage switching applications. It has a drain-to-source voltage rating of 600 V, a continuous drain current of 2.0 A, and a maximum on-state resistance of 4.4 Ω at VGS = 10 V and ID = 1.0 A. The gate charge is 9 nC typical at VDD = 450 V, VGS = 10 V, and ID = 2.0 A. The device supports a single avalanche current of 2.0 A and single avalanche energy of 2.7 mJ. The gate-to-source voltage rating is ±30 V, and the channel temperature range is -55°C to 150°C. Total power dissipation is 20 W at TC = 25°C. The part complies with RoHS requirements.