Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2008-E 2SK2008-E

2SK2008 is a silicon N-channel MOS FET for high-speed power switching in regulators, DC-DC converters, and motor control. Housed in a TO-3PFM package measuring 15.6 × 5.5 × 3.2 mm and weighing 5.2 g, it supports a 250 V drain-source voltage and 20 A continuous drain current. Its typical on-state resistance is 0.12 Ω at 10 A and 10 V gate voltage, with a gate-source breakdown of ±30 V and maximum channel dissipation of 60 W at Tc = 25°C. The part complies with RoHS and is rated as standard quality for industrial applications. The '-E' suffix denotes tube packaging, without altering core electrical properties.