Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1838STR-E 2SK1838STR-E

The 2SK1838 series consists of silicon N-channel MOSFETs designed for high-speed power switching in applications such as switching regulators and DC-DC converters. Available in DPAK(L)-(1) and DPAK(S) packages, the device has a drain-source voltage rating of 250 V, a continuous drain current of 1 A, and a maximum on-resistance of 8.0 Ω at a gate-source voltage of 10 V and drain current of 0.5 A. The channel dissipation is rated at 10 W at a case temperature of 25°C, with an operating junction temperature up to 150°C and storage temperature ranging from -55°C to 150°C. The product complies with RoHS requirements and is classified as 'Standard' quality for general industrial and consumer applications.