Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1405-E 2SK1405-E

The 2SK1405-E is a silicon N-channel MOSFET designed for high-speed power switching applications such as motor control and DC-DC conversion. It is housed in a TO-3PFM package measuring 15.6 x 5.5 mm with a typical mass of 5.2 g. The device has a drain-to-source voltage rating of 600 V, a continuous drain current of 15 A, and a maximum channel dissipation of 60 W at 25°C. It features a static drain-to-source on-resistance of up to 0.50 Ω at 10 V gate-source voltage and 8 A drain current, and includes a built-in fast body diode with a reverse recovery time of 140 ns. The MOSFET meets standard industrial quality grade requirements and is compliant with RoHS regulations. The part is shipped in a tube of 360 pieces.