Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1155-E 2SK1155-E

The 2SK1155-E is a silicon N-channel MOSFET designed for high-speed power switching in applications such as switching regulators and DC-DC converters. It is packaged in a TO-220AB case with a mass of 1.8 g. The device has a drain-to-source voltage rating of 450 V, a continuous drain current of 5 A, and a maximum channel dissipation of 50 W at 25°C. It features a typical static drain-to-source on-state resistance of 1.0 Ω at 2.5 A and 10 V gate-source voltage. Electrical characteristics include a gate-to-source voltage limit of ±30 V, input capacitance of 640 pF, and reverse recovery time of 300 ns for the body diode. The part meets industry standards for operation within specified thermal and electrical limits and is classified as 'Standard' quality for general commercial applications.