Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ546-E 2SJ546-E

The 2SJ546-E is a silicon P-channel MOSFET for high-speed power switching in a TO-220CFM package, measuring 10.0 mm in length with a terminal pitch of 2.54 mm and a mass of 1.9 g. It has a drain-source voltage rating of -60 V, a continuous drain current of -15 A, and a typical on-resistance of 0.075 Ω at -10 V gate drive. The device supports avalanche energy up to 19 mJ and operates with a channel temperature up to 150 °C. It meets RoHS requirements and is rated for standard industrial applications.