Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ545-E 2SJ545-E

The 2SJ545-E is a silicon P-channel MOSFET designed for high-speed power switching. It is packaged in a TO-220C•FM case with dimensions of 10.0 ± 0.3 mm in length, 3.2 ± 0.2 mm in width, and weighs 1.9 g. The device has a drain-to-source voltage rating of -60 V, a continuous drain current of -12 A, and a typical on-resistance of 0.11 Ω at -10 V gate drive. It features low drive current requirements and meets RoHS standards. The part is supplied in bulk packaging with 600 pieces per box.