Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD1247S-AE 2SD1247S-AE

The 2SD1247 is a PNP silicon transistor designed for large-current driving applications such as power supplies, relay drivers, and lamp drivers. It is housed in a 3-pin package measuring 5.8 mm × 4.7 mm × 6.0 mm. The device has a collector-to-emitter voltage rating of 25 V, a continuous collector current of 2.5 A, and a power dissipation of 1.0 W. The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C. At a collector current of 1.5 A and base current of 75 mA, the collector-to-emitter saturation voltage is 0.4 V maximum. The DC current gain (hFE) for the S-grade variant ranges from 140 to 280 at a collector current of 0.1 A. The gain-bandwidth product is 150 MHz, and the common-base output capacitance is 32 pF.