Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SB892S-AE 2SB892S-AE

The 2SB892 is a PNP epitaxial planar silicon transistor designed for large-current switching applications such as power supplies, relay drivers, and automotive wiring. It is packaged in a surface-mount case measuring 6.0 mm by 4.7 mm with three pins: emitter, collector, and base. The device has a collector-to-emitter voltage rating of 50 V, a collector current rating of 2 A, and a collector dissipation of 1 W. The junction temperature range is -55°C to +150°C. At 1 A collector current and 50 mA base current, the collector-to-emitter saturation voltage is 0.15 V to 0.4 V. The DC current gain (hFE) ranges from 100 to 560 at 100 mA collector current. The gain-bandwidth product is 150 MHz. The output capacitance is 12 pF at 10 V collector-to-base voltage and 1 MHz frequency.