Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA1520-TB-E 2SA1520-TB-E

The 2SA1520 is a PNP silicon transistor with on-chip bias resistors R1=2.2kΩ and R2=10kΩ, designed for switching applications. It is packaged in a CP case with a footprint defined by dimensions of 5.0mm × 5.1mm × 5.2mm. The device has a maximum collector current of 500mA, collector-to-emitter voltage rating of 50V, and power dissipation of 200mW. The junction temperature reaches up to 150°C. Gain-bandwidth product is 250MHz, and collector-to-emitter saturation voltage is 0.3V maximum at IC=50mA. The part meets RoHS standards for environmental compliance.