Rochester Electronics Memory 2102-1N

Description
Memory IC
Datasheet
Description
Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 2102-1N - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
2102-1N
Memory 2102-1N
Memory IC

Memory IC

Buy Now
Memory 2102-1N
SRAM, 1KX1, 500NS, MOS, PDIP16

SRAM, 1KX1, 500NS, MOS, PDIP16

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 2102-1N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
2102-1N
Integrated Circuits (ICs) - Memory 2102-1N
SRAM, 1KX1, 500NS, MOS, PDIP16

SRAM, 1KX1, 500NS, MOS, PDIP16

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 2102-1N 2102-1N 2102-1N
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-8852506UA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 150 ns
Density 256 kbits
View Details
Memory - Controllers - BQ2201SNG4 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type SOIC; 8-SOIC
View Details
3 suppliers
Flash Memory - 1882561 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details