Renesas Electronics Corporation 64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM X28HC64JZ-12T1

Description
The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32µs/byte write cycle, and enabling the entire memory to be typically written in 0.25 seconds. The X28HC64 also features span style="text-decorati on: overline"DATA/span Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil’s hardware write protect capability. Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.
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Description
The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32µs/byte write cycle, and enabling the entire memory to be typically written in 0.25 seconds. The X28HC64 also features span style="text-decorati on: overline"DATA/span Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil’s hardware write protect capability. Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM - X28HC64JZ-12T1 - Renesas Electronics Corporation
Milpitas, CA, USA
64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM
X28HC64JZ-12T1
64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM X28HC64JZ-12T1
The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32µs/byte write cycle, and enabling the entire memory to be typically written in 0.25 seconds. The X28HC64 also features span style="text-decorati on: overline"DATA/span Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil’s hardware write protect capability. Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.

The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs.
The X28HC64 supports a 64-byte page write operation, effectively providing a 32µs/byte write cycle, and enabling the entire memory to be typically written in 0.25 seconds. The X28HC64 also features span style="text-decoration: overline"DATA/span Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil’s hardware write protect capability.
Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.

Supplier's Site Datasheet
Memory - X28HC64JZ-12T1 - 842559-X28HC64JZ-12T1 - Win Source Electronics
Laguna Hills, CA, United States
Memory - X28HC64JZ-12T1
842559-X28HC64JZ-12T1
Memory - X28HC64JZ-12T1 842559-X28HC64JZ-12T1
Manufacturer: Intersil Corporation Win Source Part Number: 842559-X28HC64JZ-12T 1 Categories: Uncategorized Popularity: Low Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Balance

Manufacturer: Intersil Corporation
Win Source Part Number: 842559-X28HC64JZ-12T1
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance

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Memory IC and Storage Component - 774-X28HC64JZ-12T1 - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-X28HC64JZ-12T1
Memory IC and Storage Component 774-X28HC64JZ-12T1
IC EEPROM 64KBIT PARALLEL 32PLCC Product overview: X28HC64JZ-12T1 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-X28HC64JZ-12T1 can be used for catalog matching and distributor lookup.

IC EEPROM 64KBIT PARALLEL 32PLCC Product overview: X28HC64JZ-12T1 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-X28HC64JZ-12T1 can be used for catalog matching and distributor lookup.

Supplier's Site
EEPROM 8K X 8 CMOS 120NS 32PLCC

EEPROM 8K X 8 CMOS 120NS 32PLCC

Supplier's Site Datasheet
Memory - X28HC64JZ-12T1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit Parallel 120 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 64Kbit Parallel 120 ns 32-PLCC (13.97x11.43)

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Integrated Circuits (ICs) - Memory - X28HC64JZ-12T1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
X28HC64JZ-12T1
Integrated Circuits (ICs) - Memory X28HC64JZ-12T1
EEPROM 8K X 8 CMOS 120NS 32PLCC

EEPROM 8K X 8 CMOS 120NS 32PLCC

Supplier's Site

Technical Specifications

  Renesas Electronics Corporation Win Source Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number X28HC64JZ-12T1 842559-X28HC64JZ-12T1 774-X28HC64JZ-12T1 X28HC64JZ-12T1 X28HC64JZ-12T1 X28HC64JZ-12T1
Product Name 64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM Memory - X28HC64JZ-12T1 Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 70 ns 120 ns 120 ns 120 ns 120 ns
Package Type PDIP28, PLCC32, SOIC28 Tape & Reel (TR) 32-LCC (J-Lead)
Operating Current 40 mA
Standby Current 0.2000 mA
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