Renesas Electronics Corporation Memory UPD48576209F1-E24-DW1-E2-A

Description
LLDRAM Memory IC 576Mbit HSTL 400 MHz 144-TFBGA (11x18.5)
Datasheet
Description
LLDRAM Memory IC 576Mbit HSTL 400 MHz 144-TFBGA (11x18.5)
Datasheet

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LLDRAM Memory IC 576Mbit HSTL 400 MHz 144-TFBGA (11x18.5)

LLDRAM Memory IC 576Mbit HSTL 400 MHz 144-TFBGA (11x18.5)

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Integrated Circuits (ICs) - Memory - Memory - UPD48576209F1-E24-DW1-E2-A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
UPD48576209F1-E24-DW1-E2-A
Integrated Circuits (ICs) - Memory - Memory UPD48576209F1-E24-DW1-E2-A
IC DRAM 576MBIT HSTL 144TFBGA

IC DRAM 576MBIT HSTL 144TFBGA

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Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number UPD48576209F1-E24-DW1-E2-A UPD48576209F1-E24-DW1-E2-A
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F)
Density 576000 kbits 576000 kbits
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