Renesas Electronics Corporation Integrated Circuits (ICs) - Memory - Memory UPD48576209F1-E24-DW1-E2-A

Description
IC DRAM 576MBIT HSTL 144TFBGA
  • Integrated Circuits (ICs) - Memory - Memory - UPD48576209F1-E24-DW1-E2-A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - UPD48576209F1-E24-DW1-E2-A - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC DRAM 576MBIT HSTL 144TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - UPD48576209F1-E24-DW1-E2-A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
UPD48576209F1-E24-DW1-E2-A
Integrated Circuits (ICs) - Memory - Memory UPD48576209F1-E24-DW1-E2-A
IC DRAM 576MBIT HSTL 144TFBGA

IC DRAM 576MBIT HSTL 144TFBGA

Supplier's Site
Memory - UPD48576209F1-E24-DW1-E2-A - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
UPD48576209F1-E24-DW1-E2-A
Memory UPD48576209F1-E24-DW1-E2-A
LLDRAM Memory IC 576Mbit HSTL 400 MHz 144-TFBGA (11x18.5)

LLDRAM Memory IC 576Mbit HSTL 400 MHz 144-TFBGA (11x18.5)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number UPD48576209F1-E24-DW1-E2-A UPD48576209F1-E24-DW1-E2-A
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Density 576000 kbits 576000 kbits
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