Renesas Electronics Corporation Memory UPD46365092BF1-E40Y-EQ1-A

Description
QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165

QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165

Supplier's Site Datasheet
Memory IC

Memory IC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory UPD46365092BF1-E40Y-EQ1-A
QDR SRAM, 4MX9, 0.45NS

QDR SRAM, 4MX9, 0.45NS

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number UPD46365092BF1-E40Y-EQ1-A UPD46365092BF1-E40Y-EQ1-A UPD46365092BF1-E40Y-EQ1-A
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Controllers - DP8422AVX-20 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
Memory - 6116LA15TPG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 16 kbits
View Details
Memories - nvSRAM (non-volatile SRAM) - CY14B512Q2A-SXIT - CY14B512Q2A-SXIT - Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits
View Details
5 suppliers