Renesas Electronics Corporation Memory UPD46184095BF1-E40-EQ1-A

Description
Memory IC
  • Memory - UPD46184095BF1-E40-EQ1-A - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Integrated Circuits (ICs) - Memory - UPD46184095BF1-E40-EQ1-A - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Datasheet
Description
Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - UPD46184095BF1-E40-EQ1-A - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
UPD46184095BF1-E40-EQ1-A
Memory UPD46184095BF1-E40-EQ1-A
Memory IC

Memory IC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - UPD46184095BF1-E40-EQ1-A - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
UPD46184095BF1-E40-EQ1-A
Integrated Circuits (ICs) - Memory UPD46184095BF1-E40-EQ1-A
DDR SRAM, 2MX9, 0.45NS

DDR SRAM, 2MX9, 0.45NS

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number UPD46184095BF1-E40-EQ1-A UPD46184095BF1-E40-EQ1-A
Product Name Memory Integrated Circuits (ICs) - Memory
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882861P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882861P
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - Controllers - BQ2204ASN-NTRG4 - Lingto Electronic Limited
Texas Instruments
Memory - Controllers
BQ2204ASN-NTRG4
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC
View Details
2 suppliers
Memory - 00002331896 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
2331896
View Details
Memory - 71024S12TYI - Lingto Electronic Limited
Rochester Electronics
Memory
71024S12TYI
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details