Rochester Electronics Memory 27C512-200DM/B

Description
27C512 - 512K (64K x 8) CMOS EPROM
Request a Quote Datasheet
Description
27C512 - 512K (64K x 8) CMOS EPROM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 27C512-200DM/B - Rochester Electronics
Newburyport, MA, United States
27C512 - 512K (64K x 8) CMOS EPROM

27C512 - 512K (64K x 8) CMOS EPROM

Supplier's Site Datasheet
Memory - 27C512-200DM/B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 512Kbit Parallel 200 ns 32-CDIP

EPROM - OTP Memory IC 512Kbit Parallel 200 ns 32-CDIP

Buy Now
27C512 - 512K (64K X 8) CMOS EPR

27C512 - 512K (64K X 8) CMOS EPR

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 27C512-200DM/B 27C512-200DM/B 27C512-200DM/B
Product Name Memory Memory
Memory Category EPROM EPROM; EPROM EPROM; EPROM
Logic Family CMOS
Package Type DIP; CDIP28 DIP; 32-CDIP (0.600\", 15.24mm)
Access Time 200 ns 200 ns
Unlock Full Specs
to access all available technical data

Similar Products

Memory - DS2502P-E64 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Density 1 kbits
View Details
Logic - FIFOs Memory - 67L401N - Lingto Electronic Limited
Rochester Electronics
Specs
Data Rate 10 MHz
Access Time 45 ns
Operating Current 160 mA
View Details
Memory - 27C512-25B/UC - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 250 ns
Density 512 kbits
View Details
Memory - CY27H256-55JC - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 55 ns
Density 256 kbits
View Details