Renesas Electronics Corporation
Memory
UPD431000AGW-80Y-E2
Description
Memory / SRAM
-
Rochester Electronics
-
Quarktwin Technology Ltd.
-
Shenzhen Shengyu Electronics Technology Limited
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Datasheet
Description
Memory / SRAM
Request a Quote
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Datasheet
Suppliers
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Datasheet
Technical Specifications
|
Product Category
|
Memory Chips |
Memory Chips |
Memory Chips |
|
Product Number
|
UPD431000AGW-80Y-E2 |
UPD431000AGW-80Y-E2 |
UPD431000AGW-80Y-E2 |
|
Product Name
|
|
Memory |
Integrated Circuits (ICs) - Memory |
|
Memory Category
|
SRAM Chip
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|
|
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Memory Category
PROM
Density
512 kbits
Supply Voltage
20-CDIP (0.300, 7.62mm)
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2 suppliers
Memory Category
DRAM Chip
Access Time
20 ns
Number of Words
128000 k
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Memory Category
SRAM; SRAM Chip
Access Time
12 ns
Operating Temperature
-55 to 125 C (-67 to 257 F)
View Details
