Renesas Electronics Corporation Single FETs, MOSFETs UPA2820T1S-E2-AT

Description
N-Channel 30V 22A (Tc) 1.5W (Ta), 16W (Tc) Surface Mount 8-HWSON (3.3x3.3)
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Description
N-Channel 30V 22A (Tc) 1.5W (Ta), 16W (Tc) Surface Mount 8-HWSON (3.3x3.3)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - UPA2820T1S-E2-AT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
UPA2820T1S-E2-AT-ND
Single FETs, MOSFETs UPA2820T1S-E2-AT-ND
N-Channel 30V 22A (Tc) 1.5W (Ta), 16W (Tc) Surface Mount 8-HWSON (3.3x3.3)

N-Channel 30V 22A (Tc) 1.5W (Ta), 16W (Tc) Surface Mount 8-HWSON (3.3x3.3)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2820T1S-E2-AT - 1116520-UPA2820T1S-E2-AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2820T1S-E2-AT
1116520-UPA2820T1S-E2-AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2820T1S-E2-AT 1116520-UPA2820T1S-E2-AT
Manufacturer: Renesas Electronics America Win Source Part Number: 1116520-UPA2820T1S-E 2-AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 16W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 22A (Tc) Max Gate Charge: 50nC @ 10V Max Input Capacitance: 2330pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.3 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1116520-UPA2820T1S-E2-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 16W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 22A (Tc)
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 2330pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.3 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

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MOSFET MOSFET

MOSFET MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UPA2820T1S-E2-AT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2820T1S-E2-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2820T1S-E2-AT
MOSFET N-CH 30V 8HVSON

MOSFET N-CH 30V 8HVSON

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number UPA2820T1S-E2-AT-ND 1116520-UPA2820T1S-E2-AT UPA2820T1S-E2-AT UPA2820T1S-E2-AT
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2820T1S-E2-AT MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerWDFN SOT3 2330 pF @ 10 V
V(BR)DSS 30 volts
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