Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2813T1L-E2-AT UPA2813T1L-E2-AT

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 053576-UPA2813T1L-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HWSON (3.3x3.3) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 27A (Tc) Max Gate Charge: 80nC @ 10V Max Input Capacitance: 3130pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.2 mOhm @ 27A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2813T1L-E2-AT - 053576-UPA2813T1L-E2-AT - Win Source Electronics
    Win Source Electronics
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 053576-UPA2813T1L-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HWSON (3.3x3.3) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 27A (Tc) Max Gate Charge: 80nC @ 10V Max Input Capacitance: 3130pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.2 mOhm @ 27A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2813T1L-E2-AT - 053576-UPA2813T1L-E2-AT - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2813T1L-E2-AT
053576-UPA2813T1L-E2-AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2813T1L-E2-AT 053576-UPA2813T1L-E2-AT
Manufacturer: Renesas Electronics America Win Source Part Number: 053576-UPA2813T1L-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HWSON (3.3x3.3) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 27A (Tc) Max Gate Charge: 80nC @ 10V Max Input Capacitance: 3130pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.2 mOhm @ 27A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 053576-UPA2813T1L-E2-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HWSON (3.3x3.3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A (Tc)
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 3130pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.2 mOhm @ 27A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2813T1L-E2-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2813T1L-E2-AT
MOSFET P-CH 30V 27A 8HWSON

MOSFET P-CH 30V 27A 8HWSON

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 053576-UPA2813T1L-E2-AT UPA2813T1L-E2-AT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2813T1L-E2-AT Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 1500 milliwatts
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