Renesas Electronics Corporation UPA2751GR-E1-A

Description
Power Field-Effect Transistor, N-Channel MOSFET
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Description
Power Field-Effect Transistor, N-Channel MOSFET
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Datasheet
Datasheet Summary
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The µPA2751GR is an asymmetrical dual N-channel power MOSFET in a Power SOP8 package, designed for DC/DC converters in notebook computers. It has a maximum drain-to-source voltage of 30 V and a total power dissipation of 1.7 W per channel, with channel 1 rated for ±9.0 A DC drain current and channel 2 for ±8.0 A. The device features built-in gate-source protection diodes, low on-state resistance (21.0 mΩ MAX for CH1, 35.0 mΩ MAX for CH2 at VGS = 4.5 V), and low input capacitance (1040 pF TYP for CH1, 480 pF TYP for CH2). The package measures 8.1 mm × 4.4 mm with a height of 1.27 mm. The part is classified as 'Standard' quality grade.

Datasheet Summary
Powered by GS/AI

The µPA2751GR is an asymmetrical dual N-channel power MOSFET in a Power SOP8 package, designed for DC/DC converters in notebook computers. It has a maximum drain-to-source voltage of 30 V and a total power dissipation of 1.7 W per channel, with channel 1 rated for ±9.0 A DC drain current and channel 2 for ±8.0 A. The device features built-in gate-source protection diodes, low on-state resistance (21.0 mΩ MAX for CH1, 35.0 mΩ MAX for CH2 at VGS = 4.5 V), and low input capacitance (1040 pF TYP for CH1, 480 pF TYP for CH2). The package measures 8.1 mm × 4.4 mm with a height of 1.27 mm. The part is classified as 'Standard' quality grade.

Suppliers

Company
Product
Description
Supplier Links
 - UPA2751GR-E1-A - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, N-Channel MOSFET

Power Field-Effect Transistor, N-Channel MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number UPA2751GR-E1-A
Polarity N-Channel
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