Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single UPA2701GR-E1-AT

Description
Power Field-Effect Transistor, N-Channel MOSFET
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Description
Power Field-Effect Transistor, N-Channel MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - UPA2701GR-E1-AT - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, N-Channel MOSFET

Power Field-Effect Transistor, N-Channel MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1102439-UPA2701GR-E1-AT - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1102439-UPA2701GR-E1-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1102439-UPA2701GR-E1-AT
Win Source Part Number: 1102439-UPA2701GR-E1 -AT Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V ECCN: EAR99 Fake Threat In the Open Market: 47 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: 2156-UPA2701GR-E1-AT -RETR,RENRNSUPA2701G R-E1-AT Product Status: Obsolete

Win Source Part Number: 1102439-UPA2701GR-E1-AT
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-PSOP
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: 2156-UPA2701GR-E1-AT-RETR,RENRNSUPA2701GR-E1-AT
Product Status: Obsolete

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Technical Specifications

  Rochester Electronics Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number UPA2701GR-E1-AT 1102439-UPA2701GR-E1-AT
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel N-Channel
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