Power Field-Effect Transistor, N-Channel MOSFET
Win Source Part Number: 1102439-UPA2701GR-E1
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-PSOP
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: 2156-UPA2701GR-E1-AT
Product Status: Obsolete
| Rochester Electronics | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | UPA2701GR-E1-AT | 1102439-UPA2701GR-E1-AT |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | |
| Polarity | N-Channel | N-Channel |