Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2630T1R-E2-AX UPA2630T1R-E2-AX

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116513-UPA2630T1R-E 2-AX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-HUSON (2x2) Dimension: 6-WFDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 7A (Ta) Max Gate Charge: 11.3nC @ 4.5V Max Input Capacitance: 1260pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 59 mOhm @ 3.5A, 1.8V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116513-UPA2630T1R-E 2-AX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-HUSON (2x2) Dimension: 6-WFDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 7A (Ta) Max Gate Charge: 11.3nC @ 4.5V Max Input Capacitance: 1260pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 59 mOhm @ 3.5A, 1.8V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2630T1R-E2-AX - 1116513-UPA2630T1R-E2-AX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2630T1R-E2-AX
1116513-UPA2630T1R-E2-AX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2630T1R-E2-AX 1116513-UPA2630T1R-E2-AX
Manufacturer: Renesas Electronics America Win Source Part Number: 1116513-UPA2630T1R-E 2-AX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-HUSON (2x2) Dimension: 6-WFDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 7A (Ta) Max Gate Charge: 11.3nC @ 4.5V Max Input Capacitance: 1260pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 59 mOhm @ 3.5A, 1.8V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1116513-UPA2630T1R-E2-AX
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-HUSON (2x2)
Dimension: 6-WFDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7A (Ta)
Max Gate Charge: 11.3nC @ 4.5V
Max Input Capacitance: 1260pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 59 mOhm @ 3.5A, 1.8V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2630T1R-E2-AX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2630T1R-E2-AX
MOSFET P-CH 12V 7A 6HUSON

MOSFET P-CH 12V 7A 6HUSON

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1116513-UPA2630T1R-E2-AX UPA2630T1R-E2-AX UPA2630T1R-E2-AX
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2630T1R-E2-AX Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel
V(BR)DSS 12 volts
PD 2500 milliwatts
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