Manufacturer: Renesas Electronics America
Win Source Part Number: 1116513-UPA2630T1R-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-HUSON (2x2)
Dimension: 6-WFDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7A (Ta)
Max Gate Charge: 11.3nC @ 4.5V
Max Input Capacitance: 1260pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 59 mOhm @ 3.5A, 1.8V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET P-CH 12V 7A 6HUSON
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1116513-UPA2630T1R-E2-AX | UPA2630T1R-E2-AX | UPA2630T1R-E2-AX |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2630T1R-E2-AX | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | ||
| V(BR)DSS | 12 volts | ||
| PD | 2500 milliwatts |
