Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2600T1R-E2-AX UPA2600T1R-E2-AX

Description
Nch Single Power Mosfet 20V 7.0A 13.8Mohm 6Pinhuson2020
Request a Quote Datasheet
Description
Nch Single Power Mosfet 20V 7.0A 13.8Mohm 6Pinhuson2020
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - UPA2600T1R-E2-AX - Rochester Electronics
Newburyport, MA, United States
Nch Single Power Mosfet 20V 7.0A 13.8Mohm 6Pinhuson2020

Nch Single Power Mosfet 20V 7.0A 13.8Mohm 6Pinhuson2020

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2600T1R-E2-AX - 053573-UPA2600T1R-E2-AX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2600T1R-E2-AX
053573-UPA2600T1R-E2-AX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2600T1R-E2-AX 053573-UPA2600T1R-E2-AX
Manufacturer: Renesas Electronics America Win Source Part Number: 053573-UPA2600T1R-E2 -AX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-HUSON (2x2) Dimension: 6-WFDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7A (Ta) Max Gate Charge: 7.9nC @ 10V Max Input Capacitance: 870pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 19.1 mOhm @ 3.5A, 2.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Renesas Electronics America
Win Source Part Number: 053573-UPA2600T1R-E2-AX
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-HUSON (2x2)
Dimension: 6-WFDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7A (Ta)
Max Gate Charge: 7.9nC @ 10V
Max Input Capacitance: 870pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 19.1 mOhm @ 3.5A, 2.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
20V 7A MOSFET Transistor - 278-UPA2600T1R-E2-AX - ERSAELECTRONICS PTE. LTD.
Singapore
20V 7A MOSFET Transistor
278-UPA2600T1R-E2-AX
20V 7A MOSFET Transistor 278-UPA2600T1R-E2-AX
MOSFET N-CH 20V 7A 6HUSON Product overview: UPA2600T1R-E2-AX from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2600T1R-E2-AX can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 7A 6HUSON Product overview: UPA2600T1R-E2-AX from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2600T1R-E2-AX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2600T1R-E2-AX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2600T1R-E2-AX
MOSFET N-CH 20V 7A 6HUSON

MOSFET N-CH 20V 7A 6HUSON

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number UPA2600T1R-E2-AX 053573-UPA2600T1R-E2-AX 278-UPA2600T1R-E2-AX UPA2600T1R-E2-AX UPA2600T1R-E2-AX
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2600T1R-E2-AX 20V 7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type HUSON6 SOT3; 6-HUSON (2x2) Tape & Reel (TR) 870 pF @ 10 V
Packing Method Tape Reel; Cut Tape Tape Reel; Reel - TR Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
Polarity N-Channel; N-Channel
Unlock Full Specs
to access all available technical data