Renesas Electronics Corporation UPA2560T1H-T1-AT

Description
Power Field-Effect Transistor, N-Channel MOSFET
Request a Quote
Description
Power Field-Effect Transistor, N-Channel MOSFET
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The UPA2560T1H-T1-AT is a dual N-channel MOSFET in an 8-pin VSOF (2429) surface-mount package, designed for backlight inverters and portable power management. It features a maximum drain-source voltage of 30 V, gate-source voltage of ±20 V, and continuous drain current of ±4.5 A. On-state resistance is 50 mΩ maximum at VGS = 10 V and ID = 2 A, and 83 mΩ maximum at VGS = 4.5 V and ID = 2 A. The device includes a built-in gate protection diode and is marked with 2560. It is rated for operation from −55°C to 150°C and meets RoHS requirements for lead-free assembly.

Datasheet Summary
Powered by GS/AI

The UPA2560T1H-T1-AT is a dual N-channel MOSFET in an 8-pin VSOF (2429) surface-mount package, designed for backlight inverters and portable power management. It features a maximum drain-source voltage of 30 V, gate-source voltage of ±20 V, and continuous drain current of ±4.5 A. On-state resistance is 50 mΩ maximum at VGS = 10 V and ID = 2 A, and 83 mΩ maximum at VGS = 4.5 V and ID = 2 A. The device includes a built-in gate protection diode and is marked with 2560. It is rated for operation from −55°C to 150°C and meets RoHS requirements for lead-free assembly.

Suppliers

Company
Product
Description
Supplier Links
 - UPA2560T1H-T1-AT - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, N-Channel MOSFET

Power Field-Effect Transistor, N-Channel MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number UPA2560T1H-T1-AT
Polarity N-Channel
Unlock Full Specs
to access all available technical data