Renesas Electronics Corporation UPA1722G-E2-A

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
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Datasheet
Datasheet Summary
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The µPA1722G is an N-channel power MOSFET in a Power SOP8 surface-mount package, designed for DC/DC converters and power management in notebook computers. It has a drain-source voltage rating of 30 V, a continuous drain current of ±9 A, and a maximum total power dissipation of 2.0 W when mounted on a 1200 mm² ceramic substrate. On-resistance is 21.0 mΩ maximum at VGS = 10 V and ID = 4.5 A, and 32.0 mΩ maximum at VGS = 4.0 V and ID = 4.5 A. Input capacitance is 980 pF typical. The device includes a built-in gate-source ESD protection diode. It meets the Standard quality grade for industrial use and operates within a channel temperature range up to 150 °C.

Datasheet Summary
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The µPA1722G is an N-channel power MOSFET in a Power SOP8 surface-mount package, designed for DC/DC converters and power management in notebook computers. It has a drain-source voltage rating of 30 V, a continuous drain current of ±9 A, and a maximum total power dissipation of 2.0 W when mounted on a 1200 mm² ceramic substrate. On-resistance is 21.0 mΩ maximum at VGS = 10 V and ID = 4.5 A, and 32.0 mΩ maximum at VGS = 4.0 V and ID = 4.5 A. Input capacitance is 980 pF typical. The device includes a built-in gate-source ESD protection diode. It meets the Standard quality grade for industrial use and operates within a channel temperature range up to 150 °C.

Suppliers

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Product
Description
Supplier Links
 - UPA1722G-E2-A - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number UPA1722G-E2-A
Package Type SOP8
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