Renesas Electronics Corporation Single FETs, MOSFETs TPH3206LS

The TPH3206LS is a 600V, normally-off cascode GaN FET in an 8 mm × 8 mm PQFN package, designed for high-efficiency power conversion applications. It features a maximum drain-source on-resistance of 180 mΩ at 25°C, a total gate charge of 6.2 nC, and a reverse recovery charge of 52 nC, eliminating the need for a free-wheeling diode. The device supports continuous drain currents of 17 A at 25°C and 12 A at 100°C, with a peak pulsed current of 60 A. It operates with a junction temperature range of -55°C to +175°C, has a junction-to-case thermal resistance of 1.55°C/W, and is qualified to JEDEC standards. The part is RoHS compliant and halogen-free, compatible with standard gate drivers, and supports bridgeless totem-pole topologies. Not recommended for new designs.