Renesas Electronics Corporation Single FETs, MOSFETs TPH3206LDGB

The TPH3206LDGB is a 650V, normally-off GaN FET in an 8x8 PQFN package, designed for high-efficiency switching in applications such as AC-DC power factor correction, datacom, and motor drives. It has a dynamic on-resistance of 180mΩ maximum at 25°C, a total gate charge of 6.2nC, and a reverse recovery charge of 52nC. The device supports a continuous drain current of 16A at 25°C and 10A at 100°C, with a maximum power dissipation of 81W at 25°C. Thermal resistance from junction to case is 1.55°C/W, and junction-to-ambient is 45°C/W on a standard PCB. It is JEDEC qualified, RoHS compliant, and halogen-free. The part is marked not recommended for new designs, with guidance to use TP65H150LSG instead.